Part Number Hot Search : 
24R08 2SB1470 AK2364 LA768 2SK29 6024761 NTE5597 000A0
Product Description
Full Text Search
 

To Download MICROSEMICORP-LAWRENCE-JANS2N2484UBC Datasheet File

  If you can't view the Datasheet, Please click here to try to view without PDF Reader .  
 
 


  Datasheet File OCR Text:
  technical data sheet 6 lake street, lawrence, ma 01841 gort road business park, ennis, co. clare, ireland 1-800-446-1158 / (978) 620-2600 / fax: (978) 689-0803 tel: +353 (0) 65 6840044 fax: +353 (0) 65 6822298 website: http://www.microsemi.com npn silicon low power transistor qualified per mil-prf-19500/376 t4-lds-0058 rev. 2 (110016) page 1 of 6 devices levels 2n2484 2n2484ub jan 2n2484ua 2n2484ubc * jantx jantxv jans * available to jans quality level only. absolute maximum ratings (t c = +25c unless otherwise noted) parameters / test conditions symbol value unit collector-emitter voltage v ceo 60 vdc collector-base voltage v cbo 60 vdc emitter-base voltage v ebo 6.0 vdc collector current i c 50 madc total power dissipation @ t a = +25c (1) p t 360 mw operating & storage junction temperature range t j , t stg -65 to +200 c thermal char acteristics parameters / test conditions symbol value unit thermal resistance, ambient-to-case r ja c/w 2n2484 2n2484ua 2n2484ub, ubc 325 275 350 1. see 19500/376 for thermal performance curves. electrical characteristics (t a = +25c, unless otherwise noted) parameters / test conditions symbol min. max. unit off charactertics collector-emitter breakdown voltage i c = 10madc v (br)ceo 60 vdc collector-emitter cutoff current v ce = 45vdc i ces 5.0 adc collector-base cutoff current v cb = 45vdc v cb = 60vdc i cbo 5.0 10 adc adc collector-emitter cutoff current v ce = 5.0vdc i ceo 2.0 adc to-18 (to-206aa) 2n2484 2n2484ua 2n2484ub, ubc (ubc = ceramic lid version)
technical data sheet 6 lake street, lawrence, ma 01841 gort road business park, ennis, co. clare, ireland 1-800-446-1158 / (978) 620-2600 / fax: (978) 689-0803 tel: +353 (0) 65 6840044 fax: +353 (0) 65 6822298 website: http://www.microsemi.com t4-lds-0058 rev. 2 (110016) page 2 of 6 electrical characteristics (t a = +25c, unless otherwise noted) parameters / test conditions symbol min. max. unit off characteristics emitter-base cutoff current i ebo adc adc v eb = 5.0vdc v eb = 6.0vdc 2.0 10 on characteristics (2) forward-current transfer ratio h fe i c = 1.0 adc, v ce = 5.0vdc i c = 100 adc, v ce = 5.0vdc i c = 500 adc, v ce = 5.0vdc i c = 1.0madc, v ce = 5.0vdc i c = 10madc, v ce = 5.0vdc 45 200 225 250 250 225 500 675 800 800 800 collector-emitter saturation voltage i c = 1.0madc, i b = 100 adc v ce(sat) 0.3 vdc base-emitter voltage v ce = 5.0vdc, i c = 100 adc v be(on) 0.5 0.7 vdc dynamic characteristics parameters / test conditions symbol min. max. unit forward current transfer ratio |h fe | i c = 50 adc, v ce = 5.0vdc, f = 30mhz 3.0 2.0 0.7 open circuit output admittance i c = 1.0madc, v ce = 5.0vdc, f = 1.0khz h oe 40 mhos open circuit reverse-voltage transfer ratio i c = 1.0madc, v ce = 5.0vdc, f = 1.0khz h re 8.0 x 10 -4 input impedance i c = 1.0madc, v ce = 5.0vdc, f = 1.0khz h je 3.5 24 k small-signal short-circuit forw ard current transfer ratio i c = 1.0madc, v ce = 5.0vdc, f = 1.0khz h fe 250 900 output capacitance v cb = 5.0vdc, i e = 0, 100khz f 1.0mhz c obo 5.0 pf input capacitance v eb = 0.5vdc, i c = 0, 100khz f 1.0mhz c ibo 6.0 pf (2) pulse test: pulse width = 300 s, duty cycle 2.0%.
technical data sheet 6 lake street, lawrence, ma 01841 gort road business park, ennis, co. clare, ireland 1-800-446-1158 / (978) 620-2600 / fax: (978) 689-0803 tel: +353 (0) 65 6840044 fax: +353 (0) 65 6822298 website: http://www.microsemi.com t4-lds-0058 rev. 2 (110016) page 3 of 6 package dimensions note: 1. dimension are in inches. 2. millimeters are given for general information only. 3. beyond r (radius) maximum, tw shall be held for a minimum length of .011 inch (0.28 mm). 4. dimension tl measured from maximum hd. 5. body contour optional within zone defined by hd, cd, and q. 6. leads at gauge plane .054 +.001 -.000 inch (1.37 +0.03 -0.00 mm) below seating plane shall be within .007 inch (0.18 mm) radius of true position (tp) at maximum material condition (mmc) relative to tab at mmc. 7. dimension lu applies between l1 and l2. dimension ld applies between l2 and ll minimum. diameter is uncontrolled in l1 and beyond ll minimum. 8. all three leads. 9. the collector shall be internally connected to the case. 10. dimension r (radius) applies to both inside corners of tab. 11. in accordance with asme y14.5m , diameters are equivalent to x symbology. 12. lead 1 = emitter, lead 2 = base, lead 3 = collector. figure 1. physical dimensions (similar to to-18). dimensions symbol inches millimeters notes min max min max cd .178 .195 4.52 4.95 ch .170 .210 4.32 5.33 hd .209 .230 5.31 5.84 lc .100 tp 2.54 tp 6 ld .016 .021 0.41 0.53 7,8 ll .500 .750 12.70 19.05 7,8 lu .016 .019 0.41 0.48 7,8 l1 .050 1.27 7,8 l2 .250 6.35 7,8 p .100 2.54 q .040 1.02 5 tl .028 .048 0.71 1.22 3,4 tw .036 .046 0.91 1.17 3 r .010 0.25 10 45 tp 45 tp 6
technical data sheet 6 lake street, lawrence, ma 01841 gort road business park, ennis, co. clare, ireland 1-800-446-1158 / (978) 620-2600 / fax: (978) 689-0803 tel: +353 (0) 65 6840044 fax: +353 (0) 65 6822298 website: http://www.microsemi.com t4-lds-0058 rev. 2 (110016) page 4 of 6 note: 1. dimensions are in inches. 2. millimeters are given for general information only. 3. dimension ch controls the overall package thickness. when a window lid is used, dimension ch must increase by a minimum of .010 inch (0.254 mm) and a maximum of .040 inch (1.020 mm). 4. the corner shape (square, notch, radius) may vary at the manufacturer's option, from that shown on the drawing. 5. dimensions lw2 minimum and l3 minimum and the appropriate castellation length define an unobstructed three-dimensional space traversing all of the ceramic layers in which a castellation was designed. (castellations are required on the bottom two layers, optional on the top ceramic layer.) dimension lw2 maximum and l3 maximum define the maximum width and depth of the castellation at any point on its surface. measurement of these dimensions may be made prior to solder dipping. 6. the co-planarity deviation of all terminal contact points, as defined by the device seating plane, shall not exceed .006 inch (0.15mm) for solder dipped leadless chip carriers. 7. in accordance with asme y14.5m, diameters are equivalent to x symbology. figure 2. physical dimensions , surface moun t (2n2484ua). dimensions symbol inches millimeters notes min max min max bl .215 .225 5.46 5.71 bl2 .225 5.71 bw .145 .155 3.68 3.94 bw2 .155 3.94 ch .061 .075 1.55 1.91 3 l3 .003 .007 0.08 0.18 5 lh .029 .042 0.74 1.07 ll1 .032 .048 0.81 1.22 ll2 .072 .088 1.83 2.24 ls .045 .055 1.14 1.39 lw .022 .028 0.56 0.71 lw2 .006 .022 0.15 0.56 5 pin no. 1 2 3 4 transistor collector emitter base n/c
technical data sheet 6 lake street, lawrence, ma 01841 gort road business park, ennis, co. clare, ireland 1-800-446-1158 / (978) 620-2600 / fax: (978) 689-0803 tel: +353 (0) 65 6840044 fax: +353 (0) 65 6822298 website: http://www.microsemi.com t4-lds-0058 rev. 2 (110016) page 5 of 6 notes: 1. dimensions are in inches. 2. millimeters are given for general information only. 3. hatched areas on package denote metallized areas 4. pad 1 = base, pad 2 = emitter, pad 3 = collector, pad 4 = shielding connected to the lid. 5. in accordance with asme y14.5m , diameters are equivalent to x symbology. figure 3. physical dimensions , surface moun t (2n2484ub). dimensions dimensions symbol inches millimeters note symbol inches millimeters note min max min max min max min max bh .046 .056 1.17 1.42 ls1 .036 .040 0.91 1.02 bl .115 .128 2.92 3.25 ls2 .071 .079 1.80 2.01 bw .085 .108 2.16 2.74 lw .016 .024 0.41 0.61 cl .128 3.25 r .008 .203 cw .108 2.74 r1 .012 .305 ll1 .022 .038 0.56 0.97 r2 .022 .559 ll2 .017 .035 0.43 0.89
technical data sheet 6 lake street, lawrence, ma 01841 gort road business park, ennis, co. clare, ireland 1-800-446-1158 / (978) 620-2600 / fax: (978) 689-0803 tel: +353 (0) 65 6840044 fax: +353 (0) 65 6822298 website: http://www.microsemi.com t4-lds-0058 rev. 2 (110016) page 6 of 6 notes: 1. dimensions are in inches. 2. millimeters are given for general information only. 3. pad 1 = base, pad 2 = emitter, pad 3 = collect or, pad 4 = connected to the lid braze ring. 4. in accordance with asme y14.5m , diameters are equivalent to x symbology. figure 4. physical dimensions , surface moun t (2n2484ubc). dimensions dimensions symbol inches millimeters note symbol inches millimeters note min max min max min max min max bh .046 .071 1.17 1.80 ls1 .036 .040 0.91 1.02 bl .115 .128 2.92 3.25 ls2 .071 .079 1.80 2.01 bw .085 .108 2.16 2.74 lw .016 .024 0.41 0.61 cl .128 3.25 r .008 .203 cw .108 2.74 r1 .012 .305 ll1 .022 .038 0.56 0.97 r2 .022 .559 ll2 .017 .035 0.43 0.89


▲Up To Search▲   

 
Price & Availability of MICROSEMICORP-LAWRENCE-JANS2N2484UBC

All Rights Reserved © IC-ON-LINE 2003 - 2022  

[Add Bookmark] [Contact Us] [Link exchange] [Privacy policy]
Mirror Sites :  [www.datasheet.hk]   [www.maxim4u.com]  [www.ic-on-line.cn] [www.ic-on-line.com] [www.ic-on-line.net] [www.alldatasheet.com.cn] [www.gdcy.com]  [www.gdcy.net]


 . . . . .
  We use cookies to deliver the best possible web experience and assist with our advertising efforts. By continuing to use this site, you consent to the use of cookies. For more information on cookies, please take a look at our Privacy Policy. X